TFT制程简介PPT课件.ppt

1、.1TFT制程简介说明For : NBLCM F.A. TeamAuthor: Jessica _ LinDate:2009/1/8.2目录: TFT制作流程图 TFT制作过程说明 TFT五层制程说明 TFT的制作类型 TFT的工作原理 补充说明:1.实际显微镜下的比对2.TFT-LCD的工作说明其它.3TFT制作流程图:PreCleanThin Film Deposition1.Macro-Inspection2.MonitorPR coatingExposureDeveloping1.ADI2.CD measurement3.AOIDry or Wet EtchingResist stri

2、pping1.AEI2.CD measurement3.Etch rate monitor4.AOIPreClean1.Test key2.Function test3.Laser repairPhoto ProcessThin Film ProcessEtching ProcessFinal testing.4TFT制程区域划分:薄膜区薄膜区-各层之薄膜成长黄光区黄光区-曝光.显影蚀刻区蚀刻区-图案成形及去光阻测试区测试区-array及外部电路之检查Equipment: Plasma CVD ,Sputter-薄膜薄膜Nikon stepper , Canon scaner-黄光黄光Dry

3、, Wet Etching-蚀刻蚀刻.5TFT制作流程说明:黄黄 光光 前前 洗洗 净净PR Coating曝曝 光光显显 影影蚀蚀 刻刻去去 除除 光光 阻阻检检 查查薄薄 膜膜 沉沉 积积循环制程循环制程只有单一层次说明只有单一层次说明: :.6TFT Substrate1) Gate Metal (AlNd MoN) 镀上MoN(氮化钼),Al+3%Nd (GATE)2) G I N (SiNx a-Si n+ a-Si)G: Gate SiNx (氮硅化合物,绝缘层)I: a-Si (非结晶硅,通道层)N: N+ (高浓度磷(PH3)的硅)降低界面电位差,使成为奥姆接触(Omic co

4、ntact) 3) S/D Metal (Mo AlMo) 镀上镀上MoN(氮化钼),pure Al(source,drain)4) Passivation (SiNx)镀上保护层(把金属部份盖住)5) ITO (Indium-Tin-Oxide)镀上ITO (铟锑氧化物,画素电极).7TFT Layers 五层结构图Glass Substratea-SiGate metalLayer-1Insulator (G-SiNx)Layer-2n+ a-SiS/D metalLayer-3S/D metalLayer-3PassivationLayer-4ITOLayer-5PassivationL

5、ayer-4SourceDrain.8TFT制作流程图:Initial clean初始清洗初始清洗Metal 1 DepositionGate薄膜沈积薄膜沈积Pre-Dep clean沈积前清洗沈积前清洗Pre-Photo clean光阻被覆光阻被覆/曝光曝光/显影显影Metal 1 photoLayer 1黄光制黄光制程程Wet etchLayer 1蚀刻蚀刻PR strip去除光阻去除光阻Pre-dep clean沈积前预洗沈积前预洗G-I-N DepositionG-I-N 薄膜沈积薄膜沈积ADI CD显影后显影后CD量测量测CD Loss蚀刻后蚀刻后CD Loss量测量测Marco I

6、nspection强光检查强光检查IN photoIN黄光制程黄光制程ADI CD显影后显影后CD量测量测IN etchIN 蚀刻蚀刻Marco Inspection强光检查强光检查Layer-1Layer-2.9TFT制作流程图:PR strip去除光阻去除光阻Marco Inspection强光检查强光检查Pre-Dep clean沈积前预洗沈积前预洗S/D sputterS/D薄膜沈积薄膜沈积Marco Inspection强光检查强光检查S/D photoS/D黄光黄光ADI CD显影后显影后CD量测量测S/D etchS/D蚀刻蚀刻BAKE蚀刻前烘烤蚀刻前烘烤N+etchchanne

7、l蚀刻蚀刻PR strip去除光阻去除光阻Surface conditionS/D CD Loss量测量测Pass.CVD护层沈积护层沈积Marco Inspection强光检查强光检查Pass.photo护层黄光护层黄光ADI CD显影后显影后CD量测量测Layer-2Layer-3Layer-4.10TFT制作流程图:Pass.etch护层蚀刻护层蚀刻PR strip去除光阻去除光阻ITO SputterITO薄膜沈积薄膜沈积Marco Inspection强光检查强光检查ITO.photoITO黄光黄光ADI CD显影后显影后CD量测量测ITO.etchITO蚀刻蚀刻PR strip去除

8、光阻去除光阻ITO space CD LossITO CD Loss量测量测Final Anneal回火回火TEG电性量测电性量测Array testArray测试测试Laser Repair雷射修护雷射修护Layer-4Layer-5Test.11说明 Cs on gateCst金属不透光区金属不透光区BM遮进来的区域遮进来的区域ITO电极区电极区 能够控制液晶分子排列的区域能够控制液晶分子排列的区域A.R. = 65 %显微镜下的显微镜下的DOT等效电路图等效电路图:.12说明Cs on commonBM遮进来的区域遮进来的区域ITO电极区电极区 能够控制液晶分子排列的区域能够控制液晶分子

9、排列的区域Cst金属不透光区金属不透光区A.R. = 61 %等效电路图等效电路图:显微镜下的显微镜下的DOT.13TFT Device 原件动作原理:视为一个开关组件视为一个开关组件GDSGDSGDSONOFFi) 在闸极给予适当之电压在闸极给予适当之电压 :Vgs Vth使信道感应出电子使信道感应出电子,由源极由源极(S)导通至汲极导通至汲极(D)ii) 当闸极之电压当闸极之电压Vgs Vth则感应不出电子则感应不出电子,使得信道形成断路使得信道形成断路VgsVth.14TFT-LCD剖面图.15整块Panel的动作说明:ITO透明导电极CS 储存电容Gate-Bus-LineData-B

10、us-Line.16Panel外观说明:PCBA-XPCBA-YS-TABG-TABSDataLineG Scan Line DOT显示区域Fornt-RepairLineBack-RepairLine.17Panel显微镜下比对:上半部S-TABS-OLB-LeadS-Data-Line.18Panel显微镜下比对:下半部F-R.L.F-ESD-ProtectDOT AREAB-ESD-ProtectB-R.L.R.L.19其它:MTSP : Metal Sputter (金属层溅镀金属层溅镀)CVDA : AKT CVD (绝缘层镀膜绝缘层镀膜)CVDB : BPS CVD (绝缘层镀膜绝

11、缘层镀膜)ITSP : ITO Sputter (ITO层溅镀层溅镀)薄膜设备代码薄膜设备代码:TLCD : Tel Coater/Develop (光阻被覆光阻被覆/显影显影)NIKN : Nikon exposure (曝光曝光)黄光设备代码黄光设备代码:CANO : Canon exposure (曝光曝光)WETX : Wet etch (湿式蚀刻湿式蚀刻)STRP : Stripper (光阻去除光阻去除)蚀刻设备代码蚀刻设备代码:DRYT : Tel Dry etch (干式蚀刻干式蚀刻)DRYP : PSC Dry etch (干式蚀刻干式蚀刻)AOIH : Auto Optical Inspection High ResolutionSUFS : Surface Scan检验设备代码检验设备代码:AOIL : Auto Optical Inspection Low ResolutionADSI : After Develop/Strip inspectionSUFP : Surface ProfileNANO : NANO meterELIP : Ellipsometer.20THANKS FOR YOUR ATTENDANCE