wafer工艺流程-课件.ppt

1、CZ6 Basic flow introduction Page17Process Feature CZ6H process(1P3M)+option layer(MECAP,R-poly,Code P)0.45um LV(5V)logic technology CZ6H OTP(one time program)process(1P3M)+option layer(MECAP,R-poly)0.45um LV(5V)logic technology Recess LOCOS(700A)Polycide ex-situ Poly POCl3 Diffusion1500A+WSI 1750A 1

2、2/Ti-silicide Process Metal1(4500Al/100Ti/300TiN),Metal2/3(6200Al/100Ti/300TiN),Metal4(9000Al/100Ti/300TiN),TTOPME(30000Al/100Ti/300TiN)MIP module(0.78fF/um2),HTO 400A RPOLY(500 ohm/square exsitu-Poly)module,1K,2K,5K developed Passivation:CZ6H:1200TEOS+10K SION+Polyimide CZ6H OTP:1200TEOS+10K UVSION

3、Page171.WAFER START2.OXIDE WET ETCH(LAL800;3MIN;S/D)-remove native OX3.AA_OX TOX(900C;210A)-PAD OX to buffer Nitride stress4.AA NITRIDE DEP(760C;1500A 4000 LOCOS)-Suppress OX lateral diffuse LOCOS grown5.AA PHOTO6.AA SIN ETCH7.PR ASH(250C)8.PR STRIP(SPM+CAPM;NORMAL)9.FIELD OXIDATION(1100C;4000A)10.O

4、XIDE WET ETCH(DHF;200A)11.SIN WET ETCH(65MIN)12.OXIDE WET ETCH(LL130;2MIN)13.SAC0_OX(900C;210A)-protect Si surface from PR contamination and serve as screen OX when N/P well IMPP SUBP SUBLOCOSPage17P SUB 5.PW_PH 6.PW_IMP P WELL IMPLANT 1 B300K100E3A63B32R00(Well Form)PWELL IMPLANT 2 B120K350E2T07W23

5、R00(Channel Stop)PWELL IMPLANT 3 B070K150E2T07W23R00(APT IMP)P WELL IMPLANT 4 B030K175E2T07W23R00(VT adjust)7.PR ASH 8.PR STRIP(SPM+CAPM;NORMAL)1.NW_PH 2.NW_IMP NWELL IMP 1 P700K150E3A63B32R00(Well Form)NWELL IMP 2 P260K120E2T07W23R00(Channel Stop)NWELL IMP3 P150K150E2T07W23R00(APT IMP)NWELL IMP4 B0

6、15K185E2T07W23R00(VT adjust)3.PR ASH 4.PR STRIP(SPM+CAPM;NORMAL)P SUBN WELLP WELLP WELLPage171.OXIDE WET ETCH(LL130;90SEC)2.GATE OXIDATION(850C;155A)8.CAP TOP WSI DEP(SPUTTER:2000A)3.GATE POLY DEP(620C;1500A;O2 LEAK)9.CAP TOP OXIDE DEP(APOX;1200A4.PHOSPHORUS DIFFUSION 10.CAP PHOTO 5.PSG REMOVE(LL130

7、 4MIN+H2O2 4MIN)11.CAP_ET6.GATE WSI DEP(SPUTTER:1750A)12.CAP PR ASH 7.HTO DEP(400A)13.PR STRIP(SPM+HAPM;SILICIDE)P SUBP SUBN WELLP WELLP WELLMCAPPage1714.P1 PHOTO15.POLY ETCH16.NLDD IMPLANTP SUBP SUBN WELLP WELLP WELLNMOSPage17P SUBP SUBN WELLP WELLP WELL1.PLDD PHOTO2.PLDD IMPLANT3.PR STRIP4.SPACER

8、DEP(NSG;2000A)5.ANNEAL(950C;30M)6.SPACER ETCH7.SAC3 OXIDE DEPPage17P SUBP SUBN WELLP WELLP WELL1.NP_PH3.NP_IMP N+IMPLANT 1 P100K280E3T45W23R12 N+IMPLANT 2 P040K120E4T00W23R00 N+IMPLANT 3 A070K200E5A00B004.PR STRIP(SPM;SILICIDE)5.PP_PH6.PP_IMP P+IMPLANT 1 B030K200E3T00W23R00 P+IMPLANT 2 F050K500E5A00

9、B007.PR STRIP(SPM;SILICIDE)8.ANNEAL(850C;50M)Page17 CODE_PH 6.SALICIDE SPUTTER(TI 330A)CODE IMPLANT P360K300E3A00B00R00 7.RTA(700C;30S)PR STRIP(SPM;SILICIDE)8.BRANSON TREATMENT(CAPM)PRE AMORPHOUS IMPLANT 9.RTA(840C;10S)OXIDE WET ETCH(LAL30;3MIN10SEC;SILICIDE)10.BRANSON TREATMENT(CAPM)P SUBP SUBN WEL

10、LP WELLP WELLOTP cell Page17ILD OXIDE1 DEP(APOX;1500A)7.ILD BPSG DEP(B9.8;P5.4;13700A)POLY2 DEP 8.PRE-BPSG FLOW(HAPM;SILICIDE)POLY2 IMP 9.BPSG FLOW(800C;30S)POLY2 PHOTO 10.SIN WET ETCH(15MIN)P2 ETCH 11.SLN244 PRE CMP O2 TREATMENT6.ILD DEP(SIN 200A)12.ILD CMPP SUBP SUBN WELLP WELLP WELLRPOLYPage171.C

11、T PHOTO 6.CTNP_PH 2.CT PHOTO UV CURE 7.CTNP_IMP P070K200E5A00B003.CT ETCH 8.CT NPLUS PR ASH(140C)4.PR STRIP(SPM+CAPM;SILICIDE)9.PR STRIP(SPM+CAPM;SILICIDE)5.CTPP_IMP F070K500E4A00B00 10.RTA(800C;10S)P SUBP SUBN WELLP WELLP WELLCTPage17P SUBP SUBN WELLP WELLP WELLCT GULE SPUTTER(TI 300A;TIN 500A)5.M1

12、 DEP(AL 4500A;TIN 600A)CT GLUE ANNEAL(690C;30S)6.M1 PHOTO CT W CVD DEP(475C;5000A)7.M1 ETCH CT W ETCH BACK 8.SOLVENT STRIP(SST-A2;10MIN)Page17P SUBP SUBN WELLP WELLP WELL IMD1 DEP1(PETEOS;1200A)IMD1 USG DEP(O3TEOS;4000A)IMD1 DEP2(PETEOS;17000A)IMD1 CMP ALLOY(400C;10M;H2-N2)M1Page17P SUBP SUBN WELLP

13、WELLP WELLVIA1 PHOTO 7.VIA1 W CVD DEP(5000A)VIA1 ETCH 8.CT W ETCH BACKVIA1 PR ASHING(140C)9.M2 DEP(TIN 600A;AL 6200A)SOLVENT STRIP(N311;10MIN)10.M2 PHOTOVIA1 GLUE LAYER SPUTTER(TI 300A;TIN 1000A)11.M2 ETCH RTA(700C;30S)12.SOLVENT STRIP(SST-A2;10MIN)M2Page17IMD2 DEP1(PETEOS;1200A)VIA1 ETCH 10.VIA2 GL

14、UE LAYER SPUTTER(RF300;TI 300A;TIN 1000A)IMD2 USG DEP(O3TEOS;4000A)11.VIA2 W CVD DEP(5000A)IMD2 DEP2(PETEOS;17000A)12.VIA2 W ETCH BACKIMD2 CMP 13.TM SPUTTER(TIN 600A;6200A)ALLOY(400C;10M;N2)14.TM PHOTOVIA2 PHOTO 15.TM ETCHVIA2 ETCHVIA2 PR ASHING(140C)SOLVENT STRIP(N311;10MIN)P SUBP SUBN WELLP WELLP WELLTMPage17PASSIVATION DEP(PETEOS 1200A)ALLOY(400C;20M;H2-N2)PA PE SION DEPPA PHOTO PA OXIDE ETCHPA PR ASHSOLVENT STRIP(N311;10MIN;HYBRID)P SUBP SUBN WELLP WELLP WELLPADPage17Thank you