半导体封装制程与设备材料知识介绍-课件.ppt

1、 2004 BYE 2004 BYE半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。2004 BYEOxidization(氧化处理)Lithography(微影)Etching(蚀刻)Diffusion Ion Implantation(扩散离子植入)Deposition(沉积)Wafer Inspection(晶圆检查)Grind&Dicing(晶圓研磨及切割)Die Attach(上片)WireBondin

2、g(焊线)Molding(塑封)Package(包装)Wafer Cutting(晶圆切断)Wafer Reduce(晶圆减薄)Laser Cut&package saw(切割成型)Testing(测试)Laser mark(激光印字)IC制造开始制造开始前段結束前段結束后段封装开始后段封装开始製造完成製造完成 2004 BYEThrough HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)8 64DIPDual In-linePackagePlastic2.54 m

3、m(100miles)1 direction lead325SIPSingle In-linePackage 2004 BYEThrough HoleMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic2.54 mm(100miles)1 directionlead1624ZIPZigzagIn-linePackagePlastic1.778 mm(70miles)20 64S-DIPShrinkDual In-linePackage 2004 BYEThrough HoleMountShapeMaterialLead Pit

4、chNo of I/OTypical FeaturesCeramicPlastic2.54 mm(100miles)half-size pitch in the width direction2432SK-DIPSkinnyDualIn-linePackageCeramicPlastic2.54 mm(100miles)PBGAPin GridArray 2004 BYESurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesPlastic1.27 mm(50miles)2 direction lead8 40SOPSmallOu

5、tlinePackagePlastic1.0,0.8,0.65 mm4 direction lead88200QFPQuad-FlatPack 2004 BYESurfaceMountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27,0.762 mm(50,30miles)2,4 direction lead2080FPGFlatPackageof GlassCeramic1.27,1.016,0.762 mm(50,40,30 miles)2040LCCLeadlessChipCarrier 2004 BYESurface

6、MountShapeMaterialLead PitchNo of I/OTypical FeaturesCeramic1.27 mm(50miles)j-shape bend4 direction lead18124PLCCPlastic LeadedChip CarrierCeramic0.5 mm32200VSQFVerySmallQuadFlatpack 2004 BYEDie Cure(Optional)Die BondDie SawPlasmaCard AsyMemory TestCleanerCard TestPacking for OutgoingDetaping(Option

7、al)Grinding(Optional)Taping(Optional)WaferMountUV Cure(Optional)Laser markPost Mold CureMoldingLaser CutPackage SawWire Bond SMT(Optional)2004 BYEPROCESSVENDORMODELSMT-PRINTERDEKHOR-2ISMT CHIP MOUNTSIMENSHS-60TAPINGNITTODR3000-IIIINLINE GRINDER&POLISHACCRETECHPG300RMSTANDALONE GRINDERDISCO 8560DETAP

8、INGNITTOMA3000WAFER MOUNTERNITTOMA3000DICING SAWDISCODFD 6361TSKA-WD-300T 2004 BYEPROCESSVENDORMODELDIE BONDHITACHIDB700ESECESEC2007/2008ASMASM889898CURE OVENC-SUNQDM-4SWIRE BONDERK&SK&S MAXUM ULTRASKWUTC-2000ASMEagle60PLASMA CLEANMARCHAP1000TEPLATEPLA400MoldTOWAYPS-SERIESASAOMEGA 3.8 2004 BYE1.SOP-

9、Standard Operation Procedure 标准操作手册标准操作手册2.WI Working Instruction 作业指导书作业指导书3.PM Preventive Maintenance 预防性维护预防性维护4.FMEA-Failure Mode Effect Analysis 失效模式影响分析失效模式影响分析5.SPC-Statistical Process Control 统计制程控制统计制程控制6.DOE-Design Of Experiment 工程试验设计工程试验设计7.IQC/OQC-Incoming/Outing Quality Control 来料来料/出货

10、质量检验出货质量检验8.MTBA/MTBF-Mean Time between assist/Failure 平均无故障工作时间平均无故障工作时间9.CPK-品质参数品质参数10.UPH-Units Per Hour 每小时产出每小时产出11.QC 7 Tools(Quality Control 品品管管七工具七工具)12.OCAP(Out of Control Action Plan 异常改善计划异常改善计划)13.8D(问题解决八大步骤问题解决八大步骤)14.ECN Engineering Change Notice(制程变更通知制程变更通知 )15.ISO9001，14001 质量管理体

11、系质量管理体系 2004 BYE前道后道EOLWire Bond引线键合Mold模塑Laser Mark激光印字Laser Cutting激光切割EVI产品目检 SanDisk Assembly Process Flow SanDisk 封装工艺流程封装工艺流程 Die Prepare芯片预处理ie Attach芯片粘贴Wafer IQC来料检验Plasma Clean清洗Plasma Clean清洗Saw Singulation切割成型 SMT表面贴装PMC模塑后烘烤 2004 BYESMT（表面贴装）-包括锡膏印刷(Solder paste printing),置件(Chip shooti

12、ng),回流焊(Reflow),DI水清洗(DI water cleaning),自动光学检查(Automatic optical inspection),使贴片零件牢固焊接在substrate上StencilSubstrateSolder paste pringtingChip shootingReflowOvenDI water cleaningAutomatic optical inpectionCapacitorDI waterCameraHot windNozzlePADPADSolder paste 2004 BYEDie Prepare(芯片预处理)To Grind the wa

13、fer to target thickness then separate to single chip-包括来片目检(Wafer Incoming),贴膜(Wafer Tape),磨片(Back Grind),剥膜(Detape),贴片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.Wafer tapeBack GrindWafer DetapeWafer Saw 2004 BYE Inline Grinding&Polish -Accretech PG300R

14、M Transfer Coarse Grind 90%Fine Grind 10%Centrifugal Clean Alignment&Centering Transfer Back Side Upward De-taping Mount 2004 BYE2.Grinding 相关材料A TAPE麦拉B Grinding 砂轮C WAFER CASSETTLE 2004 BYE1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack 2004 BYE3。EXPANDINGTAPE Die distance

15、ELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contamination 2004 BYE3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；2004 BYE4.Grinding 配套设备A Taping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机 2004 BYE Wafer Taping -Nitto DR300IIC

16、ut TapeTaping AlignmentTransfer Transfer Back 2004 BYEDetapingDetaping 2004 BYEl Wafer mount Wafer frame 2004 BYEDicing 设备:A DISCO 6361 系列B ACCERTECH 东京精密AW-300T 2004 BYECutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoader Units:Spinner,Elevator,Cassette

17、,Rotation Arm 2004 BYEBlade Close-ViewBladeCutting WaterNozzleCooling Water Nozzle 2004 BYEDie Sawing Disco 6361 1.Twin-Spindle Structure.2.X-axis speed:up to 600 mm/s.3.Spindle Rotary Speed:Up to 45000 RPM.4.Cutting Speed:Up to 80mm/s.5.Z-axis repeatability:1um.6.Positioning Accuracy:3um.RearFront

18、2004 BYEBBD(Blade Broken Detector)Cutter-set:Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain 2004 BYEDicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片 2004 BYEWmax,Wmin,Lmax ,DDY,DY 規格 DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 1000,4 90/1004,8,11 9011,15

19、uIC type loop type 2004 BYEu Gold Wire Manufacturer (Nippon,SUMTOMO,TANAKA.)u Gold Wire Data (Wire Diameter,Type,EL,TS)2004 BYE3.Wire Bond 辅助设备A Microscope 用于测loop heightB Wire Pull 拉力计（DAGE4000）C Ball Shear 球剪切力计D Plasma 微波/等离子清洗计 2004 BYEBall SizeBall Thicknessu 單位單位:um，Milu 量測倍率量測倍率:50Xu Ball Thi

20、ckness 計算公式u 60 um BPP 1/2 WD=50%u 60 um BPP 1/2 WD=40%50%Ball Size 2004 BYEu 單位單位:um，Milu 量測倍率量測倍率:20XLoop Height 線長線長 2004 BYEu 1 Lifted Bond(Rejected)u 2 Break at neck(Refer wire-pull spec)u 3 Break at wire(Refer wire-pull spec)u 4 Break at stitch(Refer stitch-pull spec)u 5 Lifted weld(Rejected)2

21、004 BYEu 單位單位:gram or g/milu Ball Shear 計算公式計算公式u Intermetallic（IMC有有75%的共晶的共晶,Shear Strength標準為標準為6.0g/mil。uSHEAR STRENGTHBall Shear/Area (g/mil)Ball Shear=x;Ball Size=y;Area=(y/2)x/(y/2)=z g/mil 2004 BYE等离子工艺等离子工艺Plasma Processl气相-固相表面相互作用 Gas Phase-Solid Phase Interaction Physical and Chemicall分子

22、级污染物去除Molecular Level Removal of Contaminants 30 to 300 Angstromsl可去除污染物包括 Contaminants Removedl难去除污染物包括 Difficult Contaminants Finger Prints Flux Gross Contaminants Oxides Epoxy Solder Mask Organic Residue Photoresist Metal Salts(Nickel Hydroxide)2004 BYEPlasma Clean March AP1000 1.Argon Condition,

23、No oxidation.2.Vacuum Pump dust collector.3.Clean Level:blob Test Angle 8 Degree.PlasmaPCB SubstrateDie+Electrode+ArWell Cleaned with Plasma 80 o 8 o Organic Contamination vs Contact AngleWater DropChipChip 2004 BYEMold(模塑)To mold strip with plastic compound then protect the chip to prevent from dam

24、aged-塑封元件的线路，以保护元件免受外力损坏，同时加强元件的物理特性,便于使用.在模塑前要经过等离子清洗(Pre-Mold Plasma Clean),以确保模塑质量.在模塑后要经过模塑后固化(Post Mold Cure),以固化模塑料.2004 BYE设备A TOWA YPS&Y-SeriesB ASA OMEGA 3.8 2004 BYE机器上指示灯的说明：机器上指示灯的说明：1、绿灯机器处于正常工作状态；2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。机器结构了解机器结构了解正面正面指示灯主机Tabl

25、et压机人机界面紧急停机按钮紧急停机按钮 2004 BYE机器结构了解机器结构了解背面背面CULL BOX 用来装切下来的料饼；OUT MG 用来装封装好的L/F；配电柜用来安装整个模机的电源和PLC，以及伺服电机的SERVO PACK。CULL BOXOUT MG配电柜紧急停机按钮紧急停机按钮 2004 BYE2.相关材料A Compound 塑封胶B Mold Chase 塑封模具 2004 BYE模具介绍：模具介绍：型腔注塑孔胶道模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。2004 BYE3.辅助设备A X-RAY X 射线照射机 -用于Mold 后对于产品的检查B Plasma 清洗机 -作用原理和WB 前的相同；2004 BYEThanks for watching and listening