WAT测量项目以及测试方法课件.pptx

1、上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT 测量项目以及测试方法测量项目以及测试方法TD/DTD/DD:Sutter Dai2008/03/07上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT Introduction1.WAT是什么2.WAT系统介绍3.WAT测试项目及方法上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing

2、 CorporationWafer Acceptance Test（晶片允收测试）半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。通过对WAT数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。WAT是是什么什么?上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT系统介绍Manual ProberAgilent 4284A CV MeterAgilent 4156A IV MeterCascade Manual Prober上海宏力半导体制造有限公司上海

3、宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT系统介绍Agilent 4070 systemTEL P8XLAgilent 4070上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT系统介绍HP 4070 ServerAgilent 81110A Pulse Generator Agilent 4284A CV MeterAgilent E4411B Spectrum AnalyzerAgilent 4070 内部结构内部结构

4、Agilent 3458ADigit Multimeter上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWaferAuto-ProberRelay MetricServerEDA ServerTest KeyProbe cardSMUPIN NoDataDataProduct informationTest ProgramControl commandDC testerCV Meter4070ServerWAT 流程图上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semicondu

5、ctor Manufacturing CorporationWAT测试项目1.MOS device2.Field Device3.Junction4.Gate Oxide5.Resistor6.Bipolar Device7.Layout Rule Check常见的几种器件结构常见的几种器件结构上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation1.MOS Device上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporati

6、on上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationItem nameMethod of measurementIdsVd=Vg=Vdd,Vs=Vb=0,measure Id,Ids=Id/WidthVt0Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 3V,use maximum slope method,Vt0=Xintercept 1/2*VdVt1Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 2V,measureId,Vt1=VgId=0.1u

7、A*Width/LengthIsubVd=Vdd,Vs=Vg=0,sweep Vg from 0 to Vdd to get maximum Isub currentIoffVd=1.1Vdd,Vg=Vs=Vb=0,measure Id,Ioff=Id/WidthBvdVg=Vs=Vb=0,sweep Vd from 0V to Vdstop(3Vdd),measure Id,Bvd=VdId=0.1uA/um以以 NMOS 为例：为例：上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation2.Field

8、Device上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationItem nameMethod of measurementVtVd=1.1Vdd,sweep Vg from 0V to Vgstop(3Vdd),measure Id,Vt=VgId=10nA/umIleakVg=Vd=1.1Vdd,measure Id,Ileak=Id/WidthVptVg=1.1Vdd,sweep Vd from 0V to Vdstop(3Vdd),measure Id,Vpt=VdId=10nA/umWAT It

9、em Name(以Poly Nfield为例):VtNfpS(field Vt)IleakNfpSVptNfpS(punchthrough Vt)上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation3.Junction上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationWAT Item Name(以N+/PW junction为例):CNjIleakNjBvNjItem nameMethod of measureme

10、ntCjVg=0V,Vb=GND,apply a 0.03V AC signal to measure C value,Cj=C/AreaIleakVg=1.1Vdd,measure Ig,Ileak=Ig/AreaBvVb=0,sweep Vg from 0V to Vgstop(3Vdd),measure Ig,Bv=VgIg=100pA/um2上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation4.Gate Oxide上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semicondu

11、ctor Manufacturing CorporationWAT Item Name(以PW gate oxide为例):Cgpw ToxpwBvCgpwItem nameMethod of measurementCoxVg=Vdd,Vb=GND,apply a 0.03V AC signal to measure C value,Cox=C/AreaToxVg=GND,Vb=Vdd,apply a 0.03V AC signal to measure Cox value,Tox=(o*ox*Area)/CoxBvVb=0,sweep Vg from 0V to Vgstop(3Vdd),m

12、easure Ig,Bv=VgIg=100pA/um2NOTE:If there has a dummy capacitor,Cdummy should be subtracted.(Cox=Cox-Cdummy)上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation5.Resistor上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationItem nameMethod of measurementRsVh=1V,mea

13、sure Ih,Rs=(Vh/Ih)/SqrSheet resistance(RsN+/P+/NW/Poly/Metal)上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationN+N+N+P W e l lP a dP a dM 1Contact Resistance(RcN+/P+/Via)Item nameMethod of measurementRcVh=1V,Vl=GND,measure Ih,Rs=(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/NconNote:R

14、c need to subtract active&Metal resistor,RsMetal can be ignored due to metal resistor is very small.上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation6.Bipolar Device上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationS T IS T IS T IS T IN+P+P+N W e l lM 1P a

15、dP a dP a dP s u bBECWAT Item Name(以NPN为例):HfeNpn BvNpnItem nameMethod of measurementHfeIb=1uA,Vce=Vdd,Hfe=Ic/IbBvBase floating,Sweep Vce from 0V to Vcestop(3Vdd),measure Ic,Bv=VceIc=1uA上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation7.Layout Rule Check上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing CorporationPADPADNW/N+Poly/N+active/Metal bridgeP WP WP WN WN WN WN WS T IWAT Item Name(以NW bridge为例):IbriNWItem nameMethod of measurementIbriVh=1.1Vdd,measure Ih,Ibri=Ih上海宏力半导体制造有限公司上海宏力半导体制造有限公司Grace Semiconductor Manufacturing Corporation