1、.1IC常用术语园片:硅片芯片(Chip, Die):6、8 :硅(园)片直径:1 25.4mm6150mm; 8200mm; 12300mm; 亚微米1m的设计规范深亚微米 0反型层 沟道源(Source)S漏(Drain)D栅(Gate)G栅氧化层厚度:50埃1000埃(5nm100nm)VT阈值电压电压控制N N沟沟MOSMOS(NMOSNMOS) P型衬底,受主杂质; 栅上加正电压,表面吸引电子,反型,电子通道; 漏加正电压,电子从源区经N沟道到达漏区,器件开通。.6N衬底p+p+漏源栅栅氧化层场氧化层沟道P P沟沟MOSMOS(PMOSPMOS)GDSVTVGSID+-VDS 0 N
2、型衬底,施主杂质,电子导电; 栅上加负电压,表面吸引空穴,反型,空穴通道; 漏加负电压,空穴从源区经P沟道到达漏区,器件开通。.7CMOS CMOS:Complementary Symmetry Metal Oxide Semiconductor 互补对称金属氧化物半导体特点:低功耗VSSVDDVoViCMOS倒相器PMOSNMOSI/OI/OVDDVSSCCCMOS传输门.8N-SiP+P+n+n+P-阱DDVoVGVSSSSVDDCMOS倒相器截面图CMOS倒相器版图.9pwellactivepolyN+ implantP+ implantomicontactmetalA NMOS Exa
3、mple.10pwellPwellActivePolyN+ implantP+ implantOmicontactMetal.11Ntype SiSiO2光刻胶光刻胶光光MASK Pwell.12Ntype SiSiO2光刻胶光刻胶光刻胶光刻胶MASK Pwell.13Ntype SiSiO2光刻胶光刻胶光刻胶光刻胶SiO2.14Ntype SiSiO2SiO2Pwell.15pwellactivePwellActivePolyN+ implantP+ implantOmicontactMetal.16Ntype SiSiO2PwellSiO2光刻胶光刻胶MASK activeMASK Act
4、iveSi3N4.17Ntype SiSiO2PwellSiO2光刻胶光刻胶光刻胶光刻胶MASK activeMASK ActiveSi3N4.18Ntype SiSiO2PwellSiO2光刻胶光刻胶光刻胶光刻胶Si3N4.19Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧PwellSi3N4.20Ntype SiSiO2Pwell场氧场氧场氧场氧场氧场氧Pwell.21Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧Pwellpoly.22activepwellpolyPwellActivePolyN+ implantP+ implantOmicont
5、actMetal.23Ntype SiSiO2PwellSiO2MASK poly场氧场氧场氧场氧场氧场氧Pwellpoly光刻胶光刻胶.24Ntype SiSiO2PwellSiO2MASK poly场氧场氧场氧场氧场氧场氧Pwell光刻胶光刻胶poly.25Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧Pwellpoly.26Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧Pwellpoly.27activepwellpolyN+ implantPwellActivePolyN+ implantP+ implantOmicontactMetal.28Ntype SiSiO2PwellSiO2MASK N+场氧场氧场氧场氧场氧场氧Pwellpoly光刻胶光刻胶.29Ntype SiSiO2PwellSiO2场氧场氧场氧场氧场氧场氧Pwell光刻胶光刻胶polyN+ implantS/D.30activepwellpolyP+ implantPwellActivePolyN+ implantP+ implantOmicontactMetal.31Ntype SiSiO2PwellSiO2MASK N+场氧场氧场氧场氧场氧场氧Pwellpoly光刻胶光刻胶光光S/D