1、Power ElectronicsChapter 2 Power Electronic DevicesPowerElectronics2PowerElectronics3PowerElectronics4PowerElectronics5p=vi=0Off-stateCurrent through the device is 0i=0p=vi=0On-stateVoltage across the device is 0v=0PowerElectronics6PowerElectronics7O n-s ta te(c o n d u c tio n s ta te)tu rn in g-o
2、ffO ff-s ta te(b lo c k in g s ta te)tu rn in g-o ntttv vi ip pPowerElectronics8Control circuitDetection(measurement)circuitdrivecircuitPower circuit(power stage,main circuit)Control circuit(in a broad sense)Power electronic system:Electric isolation:optical or magnetic Protection circuit is also ve
3、ry often used in power electronic system especially for the expensive power semiconductors.PowerElectronics9CEGA power electronic device must have at least two terminals allowing power circuit current flow through.A power electronic device usually has a third terminal control terminal to control the
4、 states of the device.Drive CircuitPowerElectronics10has only two terminals and can not be controlled by control signal.The on and off states of the device are determined by the power circuit.is turned-on by a control signal and turned-off by the power circuitThe on and off states of the device are
5、controlled by control signals.PowerElectronics11PowerElectronics12PowerElectronics13PowerElectronics14CathodeAnodeAnodeCathodePowerElectronics15-。-。-。-。-。-。-。-。-。-。-。-。-。-。-。+-+-+-+-+-p regionn regionDirection ofinner electric fieldSpace charge region(depletion region,potential barrier region)PowerE
6、lectronics16V+-npWoW+-PowerElectronics17PowerElectronics18Larger size Vertically oriented structure n drift region(p-i-n diode)Conductivity modulation250mBreakdown voltage dependent10 mpNd=10 cmn substrate-319Na=10 cm-319+n epiNd=10 cm-314pNd=10 cmn substrate-319+Na=10 cm-319+n epi-Nd=10 cm-314iAnod
7、eCathode+-V-PowerElectronics19PowerElectronics20Avalanche breakdown Thermal breakdownPowerElectronics21PowerElectronics22IOIFUTOUFUPowerElectronics23Reverse-recovery time,reverse-recovery charge,reverse-recovery peak current.a)IFUFtFt0trrtdtft1t2tURURPIRPdiFdtdiRdtPowerElectronics24forward-recovery
8、timeb)UFPuiiFuFtfrt02VPowerElectronics25PowerElectronics26standard recoveryReverse recovery time and charge specified.trr is usually less than 1s,for many less than 100 ns ultra-fast recovery diode.A majority carrier device Essentially no recovered charge,and lower forward voltage.Restricted to low
9、reverse voltage and blocking capability (less than 200V)PowerElectronics27PowerElectronics28PowerElectronics29PowerElectronics30KGAPowerElectronics31PowerElectronics32PowerElectronics33)(121CBO2CBO1G2AIIIIPowerElectronics34PowerElectronics35OUAkIAIHIG2IG1IG=0UboUDSMUDRMURRMURSMincreasing IGPowerElec
10、tronics36100%90%10%uAKttO0tdtrtrrtgrURRMIRMiAPowerElectronics37PowerElectronics38IOUIG=0KGAAGKGKAGT1T2PowerElectronics39PowerElectronics40AGKGGKN1P1N2N2P2b)a)GKAPowerElectronics41RNPNPNPAGSKEGIGEAIKIc2Ic1IAV1V2PowerElectronics42Ot0t图1-14iGiAIA90%IA10%IAtttftstdtrt0t1t2t3t4t5t6PowerElectronics43Power
11、Electronics44becPowerElectronics45PowerElectronics46holeselectronsEbEcibic=ibie=(1+ibPowerElectronics47cut-off regionAmplifying(active)regionOIib3ib2ib1ib1ib2ib3UceSaturation regionPowerElectronics48图1-17ibIb1Ib2Icsic0090%Ib110%Ib190%Ics10%Icst0t1t2t3t4t5tttofftstftontrtdPowerElectronics49PowerElect
12、ronics50S O AOIcIcMPS BPcMUceUceMPowerElectronics51GSDP channelGSDN channelPowerElectronics52PowerElectronics53p-n-junction is reverse-biasedoff-state voltage appears across n-regionPowerElectronics54PowerElectronics55PowerElectronics56RsRGRFRLiDuGSupiD+UEPowerElectronics57PowerElectronics58PowerEle
13、ctronics59PowerElectronics60PowerElectronics61PowerElectronics62PowerElectronics63EGCN+N-a)PN+N+PN+N+P+EmitterGateCollectorInjecting layerBuffer layerDrift regionJ3J2J1PowerElectronics64GEC+-+-+-IDRNICVJ1IDRonDrift regionresistanceGCEPowerElectronics65OActive regionCut-off(forwardblocking)regionSatu
14、ration region(On region)Reverseblocking regionICURMUFMUCEUGE(th)UGEPowerElectronics66IGBT turn-on is similar to power MOSFET turn-onThe major difference between IGBT turn-off and power MOSFET turn-off:There is current tailing in the IGBT turn-off due to the stored charge in the drift region.PowerEle
15、ctronics67PowerElectronics68PowerElectronics69PowerElectronics70PowerElectronics71PowerElectronics72PowerElectronics73PowerElectronics74PowerElectronics75Band gapE E4E E3E E2E E1PowerElectronics76610/V cm2/cmV S CPowerElectronics77Physical Properties of Silicon CarbidePowerElectronics78PowerElectron
16、ics79Wafer ProductionPowerElectronics80Infineon SiC overviewUnipolar devicesExisting products:Diode based:300V 1200V(1700V can be realized on demand)Under development:JFET based:600V 1500V(discrete,cascodes in modules)Expansion to higher voltage classes(single chip/super-cascode)possibleBipolar devi
17、cesNo development activities at IFXSolid volume forecasts and cost targets requiredPowerElectronics81PowerElectronics82Integrationof power electronic devicesSmart power integrated circuit(Smart power IC,SPIC,Smart switch)High voltage integrated circuit(HVIC)Ordinary power module:just power devices p
18、ackaged togetherIntegrated power electronics Module(IPEM):power devices,drive circuit,protection circuit,control circuitIntelligent power module(IPM):power devices,drive circuit,protection circuit(Lateral high-voltage devices fabricated with conventional logic-level devices)(Vertical power devices o
19、nto which additional components are added without changing the vertical power devices process sequence)For a high power equipment,more than one module may be needed,in which case the modules are also called Power electronics building blocks(PEBB)PowerElectronics83PowerElectronics84thyristor,GTO,GTR
20、PowerElectronics85PowerElectronics86PowerElectronics87PowerElectronics88PowerElectronics89PowerElectronics90Donor and acceptor space charges cancel each other out!PowerElectronics91PowerElectronics92Package contribution to Rds(on)for Best-in-Class LV MOSFET devicesPowerElectronics93Package developmentPowerElectronics94PowerElectronics95
