1、第三章 在现代电子通信系统射频电路中，其与低频电路的最大区别就在于。E (or V) and H (or I) fieldsElectromagnetic Maxwells EquationSkin depth1clftBEtDJHvD0 B 22201/,/()/2(),/2 ,/21/dcdccaccdcdccJIaRlaJpIJpraJpapjR RalL Rallf Skin depth /10L1/2/prrCvfk 0cos()xxEEtkzgdvdkk( , )sin()/oxv t zEtkzk( ( , )oxv t zE dz 工作波长与电路尺寸相当时工作波长与电路尺寸相当
2、时,必须采用电磁场必须采用电磁场分析方法分析方法 E面定位()( )() ( )V zzV zRjL I zz ()( )() ()I zzI zGj C V zzz ( )() ( )dV zRj L I zdz( )() ( )dI zGj C V zdz222( )( )0d V zk V zdzK.V.L K.C.L 0),(),(),(),(tzzvttzizLtzziRtzv0),(),(),(),(tzzittzzvzCtzzzvGtziDividing by z then z-0 ( , )( , )( , )( , )( , )( , )( )() ( )( )() ( )v
3、 z ti z tRi z tLzti z tv z tGv z tCztdV zRj L I zdzdI zGj C V zdzi(z, t)+v(z, t)_zzZi(z, t)+v(z, t)_RLGzCzzz222( )( )0d V zk V zdz222( )( )0d I zk I zdz()()kRjLGj Cj( )kzkzV zV eV e( )kzkzI zI eI e( , )coscoszzououv t zVtzeVtze2Pvf( , )coscoszzoioii t zitzeitze0()/()VVZRj LGj CII ( )()()kzkzKI zV eV
4、 eRjL01()kzkzV eV eZ Characteristic impedance (Zo) ranges for the various structuresStructure Zo()Microstrip 20-125Inverted microstrip 20-130Trapped inverted microstrip (TIM) 30-140Suspended stripline 40-150Coplanar waveguide (CPW) 40-150Slotline 60-200Finline 10-400Imageline 260,0RG0/Zj Lj CL CkLC/
5、LC( , )coscosououv t zVtzVtz( , )coscosoioii t zitzitz0( )?( )inV dZI d)kzkzV zV eV e（( )( )( )VzzVz)()kzkzkzkzooV zV eV eVee （)()kzkzoI zIee（)( )/ ( )Z zV zI z（V ()/Zkzkzoeeo0z 10)1oLooZZZ（LooLoZZZZkjjLC)()jzjzoV zVee （)()/j zj zooI zV eeZ（22(1)( )/ ( )(1)j dj doinoj dj doV eeZV dI dZV ee（d)()j zj
6、zoV zVee（)()/j zj zooI zV eeZ（cossin( )cossinLOinOOLZd jZdZ dZZd jZd(0)inLZZcossin( )cossinLOinOOLZzjZzZzZZzjZz)()j zj zV zVee（)2sin()cos(/2)vVzt（z,t)2sin()cos(/2)vVzt（z,t(0)0oo 2)(1)( )(1( )j zjzoV zV eeA zz（2( )( )jzjzoA zV eze )j zV zV e（0maxmaxminmin011VISWRVI 1SWR0o ljZZOintanljZZOincotLOinZZZ2GosGoZZZZoGinGoZZZZ(1)()ininininGinGZVVVZZ 11ssoGsZZZ11ininoinZZ (1)/inininoIVZ130dBwdBm()()10log1P mWP dBmmW()()10logP WP dBmW
