1、CF Process簡介JerryTFT/LCD材料工程部材料工程部CMO Confidential LCD & CF結構簡介 CF光阻材料簡介 CF製程及檢驗手法簡介 Macro Inspection 判定方法 Micro Inspection 判定方法 CF Product ID naming rule課程大綱CMO ConfidentialLCD面板 結構圖下玻璃基板下玻璃基板上玻璃基板上玻璃基板上偏光板上偏光板PSPS液晶分子液晶分子下偏光板下偏光板框膠框膠配向膜配向膜TFT元件元件彩色濾光板彩色濾光板液晶層液晶層光線光線( (背光源背光源) )LCD : Liquid Crystal
2、 Display (液晶顯示器)CMO ConfidentialCF 結構圖ITO剖剖面面示示意意圖圖俯俯視視示示意意圖圖實際圖例實際圖例素玻璃BMR LayerGBMVAPSCF : Color Filter (彩色濾光片)CMO Confidential光阻材料分類與成分 BM (Cr), MVA Color Resist(R, G, B), PS, RBM彩色光阻溶劑固成分PastePolymerMonomerPhoto-initiatorAdditivePigmentDispersantSolventMonomerInitiatorCMO Confidential光阻材料成分 v.s
3、光阻特性成分成分塗布性塗布性顯影性顯影性色表現色表現對比度對比度 信賴性信賴性 ProfilePaste Polymer Photoinitiator MonomerAdditiveSolventCMO ConfidentialCF 製造流程1.廣視角產品廣視角產品(MVA產品產品):2.非廣視角產品非廣視角產品(TN產品產品):BMRGBITOPS BMRGBITOMVA PS * BM 依材質類型有依材質類型有 Resin 及及Cr BM 二種二種CMO ConfidentialCF 製作方法CMO ConfidentialCF 製程機制: PhotolithographyPhotosen
4、sitive MaterialsSubstrateNegative TypePositive TypeMMBinderUV PigmentPhoto-initiatorSolubleInsolubleCoatingExposureDevelopmentImagesUV Photolithography :顯影液 : KOHCMO ConfidentialCF Process優點 : 1. Process減少(設備簡化) 2. 光阻用量減少(1) Spin (1) Spin - - 轉速轉速(rpm)(rpm)決定膜厚決定膜厚(2) Spinless (2) Spinless - 吐出量吐出量(
5、PR(PR值值) )決定膜厚決定膜厚CoaterSpinVCDEBRHP/CPExposureDevelopmentAOIOvenCassetteCoaterVCDHP/CPExposureDevelopmentAOIOvenCassetteCoater :優點 : 塗佈均勻性較好 缺點:1. 多一道製程 2. 光阻用量多(浪費光阻, 增加成本)CMO ConfidentialBM Process (1300)q BM: 遮蔽漏光區, 增加對比q RGB: 提供色度q ITO: 提供電場所需之電極q MVA/DJ ITO: 提供廣視角q PS: 支撐TFT/CF所需之Cell GapCMO C
6、onfidentialBM Process鉻玻璃清洗正光阻塗佈(1)正光阻塗佈(2)Pre-cleanerSlit coaterSpin coater2. BM photo lineUnpacker & Initial cleaner鉻膜濺鍍素玻璃投入1. Cr sputtering鉻玻璃Cr sputterCr glassCrOx, CrNy, Cr一一. Cr BM process :XX : Spinless 無CMO ConfidentialBM Process蝕刻去光阻紫外線曝光顯影烘烤(Oven)去掉邊緣光阻EBR(Edge Bead Rinse)AlignerDeveloperH
7、ot plate3. Etching lineEtchingStrippingBM pattern glass真空乾燥Vacuum DryerPre-bake & Cool plateXX : Spinless 無預烘烤(HP)與冷卻(CP)CMO ConfidentialBM Process二二. RBM process :素玻璃清洗負光阻塗佈(1)負光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterXX : Spinless 無紫外線曝光顯影烘烤(Oven)去掉邊緣光阻EBR(Edge Bead Rinse)AlignerDeveloperHot plate真
8、空乾燥Vacuum DryerPre-bake & Cool plateX預烘烤(HP)與冷卻(CP)CMO Confidential 環保意識 降低設備及建廠成本(省掉sputtering及Etching的設備) 簡化製程流程 製程一致性(BM, RGB, PS均使用負光阻)RBM 的優點CMO ConfidentialBlack matrix 的功用遮蔽TFT避免pixel以外區域漏光增進色彩對比性降低面板的反射光Black matrix 的需求低反射率 : 減低外來光線的干擾高OD值 : 阻隔pixel間的背光(增高對比)膜厚薄(避免角斷差發生)低pinhole數 : 避免漏光,產生亮點
9、低particle數 : 增加良率CMO ConfidentialBM Inspection1231.Total Pitch ( 長寸法)2.CD (Critical Dimension )3.Mark to Edge ( 端寸法 )SubstrateR1. OD= - log ( I / Io ) 42. 反射率 ( Cr BM )3. Thickness (Resin BM)顯影後缺陷檢查ADI (After Developer Inspection)巨觀檢查( Macro review )IoIBM TP/EGDEX1DEYDEX2DEY2123456710981312111415161
10、71819202122CMO ConfidentialqILSP01: OD Start 區 & 平坦區各1點, 片片檢 避免Start 區 & 平坦區的OD值差異太大.qMUIN01: Macro 確認In-line Macro 品質狀況(有無mura)qPRIN01:AOI, CD 確認In-line Micro 品質狀況 避免CD太低, 造成LCD 漏光RBM Layer In-line SamplingCMO ConfidentialRBM Layer off-line SamplingqSPME01: OD 避免OD太低, 造成LCD 漏光qMACR51: Macro 確認BM of
11、f-line Macro 品質狀況qCDME01:CD, 端寸端寸, Total pitch 避免CD太低, 造成LCD 漏光 避免T/P太大 or 太小, 造成LCD對組後漏光qSUFT01:BM Thickness 控制角段差及ODCMO ConfidentialRGB Process (2300, 3300, 4300)q BM: 遮蔽漏光區, 增加對比q RGB: 提供色度q ITO: 提供電場所需之電極q MVA/DJ ITO: 提供廣視角q PS: 支撐TFT/CF所需之Cell GapCMO ConfidentialRGB Process - R-Layer紅色光阻塗佈(1)紅色
12、光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterBM pattern glass清洗紫外線曝光顯影去掉邊緣光阻EBR (Edge Bead Rinse)AlignerDeveloper烘烤Oven真空乾燥Vacuum Dryer預烘烤(HP)與冷卻(CP)Pre-bake & Cool plateXXX : Spinless 無CMO ConfidentialRGB Process - G-Layer綠色光阻塗佈(1)綠色光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterR glass清洗紫外線曝光顯影去掉邊緣光阻EBR (Edge
13、 Bead Rinse)AlignerDeveloper烘烤Oven真空乾燥Vacuum DryerPre-bake & Cool plateXX預烘烤(HP)與冷卻(CP)X : Spinless 無CMO ConfidentialRGB Process - B-Layer藍色光阻塗佈(1)藍色光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterR,G glass清洗紫外線曝光顯影去掉邊緣光阻EBR (Edge Bead Rinse)AlignerDeveloper烘烤Oven真空乾燥Vacuum DryerPre-bake & Cool plateXX預烘烤(H
14、P)與冷卻(CP)X : Spinless 無CMO Confidential121. Pixel CD2. Overlay3. 厚度厚度(RGB段差段差)50060070080040020406080100透過率 波 長 (nm)4. RGB 色度量測色度量測3RGB InspectionCMO ConfidentialITO Process (5200)q BM: 遮蔽漏光區, 增加對比q RGB: 提供色度q ITO: 提供電場所需之電極q MVA/DJ ITO: 提供廣視角q PS: 支撐TFT/CF所需之Cell GapCMO ConfidentialITO = Indium Tin
15、 Oxide (銦錫氧化物銦錫氧化物) 90 wt. % In2O3+10 wt.% SnO2 CMO ConfidentialVacuum ChamberSubstrateTargetPlasmaAr+e-Gas InletVacuum Pumps-2kVCMO ConfidentialITO sputtering process氧化銦錫膜濺鍍ITO sputterITO pre-cleaner (水洗, 清洗無機物)R,G,B玻璃投入ITO玻璃ITO glassDefect Inspection (缺陷檢查機)(Micro 1, 4560)UV asher (清洗有機物)紫外線灰化Repa
16、ir (修補)(repair 1, 4578)CMO ConfidentialITO Inspection1. RGB 色度量測色度量測2. Rs(電阻值電阻值) 量測量測3. 光穿透率量測光穿透率量測4. ITO膜厚量測膜厚量測5. T/P 量測量測50060070080040020406080100透過率 波 長 (nm)ITOCMO ConfidentialMVA Process (6300)q BM: 遮蔽漏光區, 增加對比q RGB: 提供色度q ITO: 提供電場所需之電極q MVA/DJ ITO: 提供廣視角q PS: 支撐TFT/CF所需之Cell GapCMO Confide
17、ntial何謂廣視角?TN typeSuper MVACMO ConfidentialMVA Process (Multi-domain Vertical Alignment)X : Spinless 無正光阻塗佈(1)正光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterITO glass清洗紫外線曝光顯影去掉邊緣光阻EBR (Edge Bead Rinse)AlignerDeveloper烘烤Oven真空乾燥Vacuum DryerPre-bake & Cool plateXX預烘烤(HP)與冷卻(CP)CMO ConfidentialMVA Inspectio
18、n1. 厚度量測厚度量測2. Pixel CD 量測量測3. Overlay4. Macro膜厚CMO ConfidentialPS Process (7300)q BM: 遮蔽漏光區, 增加對比q RGB: 提供色度q ITO: 提供電場所需之電極q MVA/DJ ITO: 提供廣視角q PS: 支撐TFT/CF所需之Cell Gap (間距)PSCFTFTCMO ConfidentialPS ProcessPS光阻塗佈(1)PS光阻塗佈(2)Pre-cleanerSlit coaterSpin coaterglass清洗紫外線曝光顯影去掉邊緣光阻EBR (Edge Bead Rinse)A
19、lignerDeveloper烘烤Oven真空乾燥Vacuum DryerPre-bake & Cool plate預烘烤與冷卻XXX : Spinless 無CMO ConfidentialPS Inspection1. 厚度量測厚度量測2. Pixel CD 量測量測3. Overlay4. Macro膜厚CMO Confidential最終檢查(Final Inspection)Macro inspection巨觀檢查AOI Pre-cleaner光學檢查前清洗AOI (Auto -Opto Inspection)光學檢查(Micro 2, 7560)Micro review拍照判Cod
20、eJudgement & Sorting判定與品質分類出貨Shipping非MVA產品MVA產品Repair修補(repair 2, 7578)CMO ConfidentialMacro Inspection 判定方法日光燈箱 鈉 燈 檯 燈 綠 燈 鹵 素 燈 反射 透過 反射 透過 反射 透過 反射 透過 反射 透過 Alignment Mark Defect Mura EBR Residue 髒 污 透過暗點 透過亮點 玻璃缺陷 殘 膜 刮 傷 RGB Coin Mura DD Coin Mura PS Coin Mura Discolor Coludy Mura 註: 表示主要檢驗與判
21、定方式; 表示輔助檢驗方式。CMO ConfidentialMicro Inspection 判定方法q Defect code Defect code 設定為三碼設定為三碼, , 分述如下分述如下 : 第一碼第一碼:群組區分群組區分2 2Inline MacroInline Macro3 3Inline AOIInline AOI4 4Measurement NGMeasurement NG5 5Micro review NGMicro review NG6 6Macro NGMacro NG7 7Ink RepairInk Repair8 8Micro review repairMicro
22、 review repairCMO ConfidentialMicro Inspection 判定方法第三碼第三碼:Defect 類別類別第二碼第二碼:層別層別1BM-Layer2R-Layer3G-Layer4B-Layer5ITO-Layer6MVA-Layer7PS-Layer8預留碼預留碼9OTHER0機台異常機台異常CMO ConfidentialMicro Inspection 良率範例CMO ConfidentialMicro Inspection 判定方法513 BM Break 2515 BM Remain517 BM Remain Particle51A BM Scratc
23、h521 R Shift522 R RemainCMO ConfidentialMicro Inspection 判定方法550 Dirty528 R SUS Particle527 R Particle523 R Thinner524 R Pin Hole52A R ScratchCMO ConfidentialCF Product ID naming ruleCMO Confidential尺寸對照表CMO Confidential Thank you!CMO ConfidentialAppendix 1 Color Filter 信賴性評價耐熱性、耐溶劑性、耐化性試驗例如:耐熱性-(a)HP 230 x 1hr (b)HP 200 x 3hr 耐溶性(a)NMP、乙醇、IPA ,25 x 1hr 耐藥性(a)80,純水 x 1hr (b)25,2% NaOH x 510min耐環境性試驗例如:高溫保存(85,5001000hr),高溫高濕 (60/90%HR x 200hr),低溫保存(-40 x 500hr), 冷熱衝擊(-4085各30min,20次循環),耐光性 (氙燈照射200hr)