1、Semiconductor Technology Trends&SMICs R&D to Supply Manufacturing TechnologiesDr.Shiuh-Wuu Lee 李序武博士Executive VP,Technology R&D,SMICOct 23th,20142014北京微电子国际研讨会Safe Harbor StatementsUnder the Private Securities Litigation Reform Act of 1995lThis document contains,in addition to historical information
2、,“forward-looking statements”within the meaning of the“safe harbor”provisions of the U.S.Private Securities Litigation Reform Act of 1995.These forward-looking statements are based on SMICs current assumptions,expectations and projections about future events.SMIC uses words like“believe,”“anticipate
3、,”“intend,”“estimate,”“expect,”“project”and similar expressions to identify forward looking statements,although not all forward-looking statements contain these words.These forward-looking statements are necessarily estimates reflecting the best judgment of SMICs senior management and involve signif
4、icant risks,both known and unknown,uncertainties and other factors that may cause SMICs actual performance,financial condition or results of operations to be materially different from those suggested by the forward-looking statements including,among others,risks associated with cyclicality and marke
5、t conditions in the semiconductor industry,intense competition,timely wafer acceptance by SMICs customers,timely introduction of new technologies,SMICs ability to ramp new products into volume,supply and demand for semiconductor foundry services,industry overcapacity,shortages in equipment,component
6、s and raw materials,availability of manufacturing capacity,financial stability in end markets and intensive intellectual property litigation in high tech industry.lIn addition to the information contained in this document,you should also consider the information contained in our other filings with t
7、he SEC,including our annual report on Form 20-F filed with the SEC on April 14,2014,especially in the“Risk Factors”section and such other documents that we may file with the SEC or SEHK from time to time,including on Form 6-K.Other unknown or unpredictable factors also could have material adverse ef
8、fects on our future results,performance or achievements.In light of these risks,uncertainties,assumptions and factors,the forward-looking events discussed in this document may not occur.You are cautioned not to place undue reliance on these forward-looking statements,which speak only as of the date
9、stated or,if no date is stated,as of the date of this document.2Outline1.Major Technology Challenges2.SMICs Technology R&D Strategies and Plans(1)Continue to build&enhance high quality and innovative R&D at SMIC(2)Place significant focus on leading-edge differentiation technologies(3)Strengthen R&D
10、on advanced CMOS technology(4)Enrich design IP to actively support design houses for faster TTM(5)Actively drive the growth in domestic IC industry chain3.Concluding Remarks3国际主流逻辑技术路线图1H132H131H142H141H152H152H121H162H161H172H17Skip 20nm Planar14nm FF16nm FF14nm FF14nm FF14nm FF22nm FFSpeculated14n
11、m FFTrial/NTOMPFoundryTGFUSamsung(Intel)国际主流公司未来五年逻辑技术路线图，各公司均加快了科研进度，多数公司在未来五年均拟推出3代或3代以上技术产品。20nm Planar20nm Planar10nm FinFET10nm FinFET10nm FinFET10nm FinFET7nm FinFET7nm FinFET7nm FinFET7nm FinFET Pre-manufacture TechnologiesManufacture Technologies4落后2-3年摘自：北京大学王阳元摘自：北京大学王阳元,20125 光刻技术 新材料 工艺误
12、差 新结构 工艺集成芯片制造技术中的五大技术挑战6技术挑战-1:精密图形转换?如何用193纳米波长光源形成65-20纳米特征长度的图形?1.光学修正(OPC),相移掩膜(Phase Shift Mask)2.浸没式光刻(Immersion Litho)3.多重曝光和刻蚀(Multiple Patterning)7光刻技术的瓶颈三因素Phase Shift MaskOff-axis illumination.8 光学修正技术使得图形比波长短 光掩模图形图形光掩模9Design Rule of Critical Layers Contact PL PitchFin193nm Happy Days1
13、93nm 光刻的瓶颈193纳米光刻技术支撑CMOS发展65-14nm10新材料在CMOS中的应用本世纪来:47种新材料进入集成电路制造.共计64种材料.12547技术挑战-2:新材料新工艺11 新材料技术带来的器件性能提高0.13um 90nm 65nm 45nm 32nm12产品技术杀手:工艺随机误差 技术挑战-3:工艺误差DFM：研究工艺误差带来的器件产品性能变化，并提出解决方案。APC:及时发现工艺异常.13Direct impact:SRAM yield Circuit performance and design margin Indirect impact:Reliability
14、Mobility Manufacturing control挑战：在低电压下获得高电流和少泄漏 即在低电源电压情况下（低电压可以获得好的功耗指标），要设法获得更大的驱动能力和更小的晶体管延时（提高性能）。显然，在传统的体硅平面器件上，已很难实现上述要求。栅泄漏电流寄生电阻短沟效应迁移率退化波动性动态功耗驱动能力：IDSat=CgvinjCg(Vdd-Vt)eff功耗：P=CgVdd2f+IleakageVdd速度：g=CgVdd/IDSat来源：北京大学黎明研究员体硅平面工艺似乎走到尽头?技术挑战-4:新结构14 3维晶体管FinFET功函数高K材料源漏电阻电路模型沟道材料接触电阻q新器件的设
15、计问题新一代FinFET器件的结构优化应力分布模拟、迁移率提取、输运机制、可靠性与涨落特性器件结构参数和工艺参数对电路性能的影响q可制造性问题栅泄漏电流，功函数调节，源漏串联电阻及接触电阻等关键问题材料体系与工艺技术的稳定性可靠性问题q大生产平台上工艺集成问题自对准多次曝光技术，纳米级Fin和Gate的光刻和刻蚀，节距的缩小带来的原子水平的间隙填充，低介电常数侧墙，超低K铜互连等。158001000140065nm45nm20nm65-14纳米CMOS工艺流程复杂度技术挑战-5:工艺集成技术每一代新技术需要约20%以上的工艺设备添置和更新几乎每步工艺需要实验,关键工艺需要数百次120032nm
16、160014nm16Outline1.Major Technology Challenges2.SMICs Technology R&D Strategies and Plans(1)Continue to build&enhance high quality and innovative R&D at SMIC(2)Place significant focus on leading-edge differentiation technologies(3)Strengthen R&D on advanced CMOS technology(4)Enrich design IP to acti
17、vely support design houses for faster TTM(5)Actively drive the growth in domestic IC industry chain3.Concluding Remarks17HV0.13m0.16m0.20m0.25m0.35mLCOS0.13m0.18m0.25m0.35mMEMS0.13m0.18m14nm28nmRF/MS28nm40nm55nm65nm90nm0.13m0.18mSOC platformsFlash(ETOX)38nm45nm65nm90nm0.13m0.18m0.25me-Flash55nm90nm0
18、.11m0.13m0.18mImager55nm BSI90nm FSI/BSI0.11m BSI0.13m FSI0.15m FSI0.18m FSIEEPROM0.11m0.13m0.18m0.35m40nm65/55nm90nm0.11m0.13m0.15m0.18m0.25m0.35mLogicBaselinePMIC0.13m0.18m0.35mSOC platformsSMICs Two-Pronged Technology Strategy1828nm Readiness and MPW Milestones1st SMIC 28nm MPW Dec/2013MPW28PS&28
19、HK V0.5 V0.5 Nov/2013 Jan/2014 PDK28PS&28HK Q4/2014-Q1/2015ProcessQualification28PS&28HKDec/2013Process Freeze4Q13On Time Delivery!Y14 NTO YearY14 MPW4 Shuttles:28PS,28HKApr,Jun,Aug,Dec28nmMilestone19MTE Device StructureDevice Structure:2x gate densityAdvantages 50%reduction in transistor pitch from
20、 0.79um to0.39um by SA/SB shrunk.1/3 parasitic S/D junction capacitance compare to conventional structure.Actual Performance Standard Cell library:37%area shrunk in pared to 13LL SRAM:50%bitcell size(1.05um2)vs 13LL(2.03um2)with 2pA/cell Istdby SRAM:Smallest bitcell(0.74um2)10M yield 67%GTCTN+N+PW0.
21、130.040.160.13Poly20.13 MTEGTCTCTN+N+PW0.060.110.160.130.13 BL20MTE Merits High PerformanceParameterunit013MTE*013LLMTE vs.LLWum100100N/ASA/SAum0.130.38N/ACj0_total_n15fF14.0528.994-51.5%Cgd0_total_n15fF4238.98.0%S/D_CV_total_n15fF56.0567.894-17.4%Cj0_total_p15fF11.1847.31-76.4%Cgd0_total_p15fF43.93
22、6.121.6%S/D_CV_total_p15fF55.0883.41-34.0%Junction capacitor table from SPICE modelp As high as 70%reduction in S/D parasitic capacitance was obtained in latest lot.p Device fine tuning needed to further reduce parasitic junction capacitance.GTCTN+N+PW0.13Cj=Cgd0.13 MTE2122Driving Technology R&D wit
23、h InnovationSource:Corp.Legal,data as of July.29,2014Patents filed:9,088 totalPatents granted:4,174 totalIssued patentsFiled patentsSMIC is amongst the Top 5 companies in China in numbers of patents granted16纳米节点关键技术FinFET世界前十一名中国第1位22Grow Competitive Portfolio for Mobile InternetCurrent focuses:28n
24、m,20nm,16nm,14nm,3D IC,IP design,MEMS and new memory3G ProductionTechnologies4G R&D CompletedSource:SMIC dada23SMICs Technology PortfolioIn ProductionMajor Focus(close to or in early production)Future Plan 20/14nm28nm38nm40/45nm55nm65nm90nm0.11m0.13m0.15/0.153m0.18m0.25m0.35mPower MgmtMCUImage&Displ
25、ayMobile ComputingDigital HomeWireline Comm.WirelessConnectivityNOR/NAND/Memory Smart Card24中芯国际多元差异化器件和互连与3D系统集成技术全貌25中芯国际TSV与3D芯片及系统集成技术产业化进程表产业化产业化26q FinFET Features demo-ed:3D fin basedAll-last RMGLocal interconnect MOL64nm BEOL metal pitch with double patterningFunctional transistors with exce
26、llent electrostatic performance!q Features in workingpFET epi SiGe on finnFET epi Si/SiC on finSelf-aligned local inter-connect contact(SAC)VG(V)14nm先导技术研究进展：FinFET工艺结果Source:SMIC dada27Gate PolySTIFinRaised EPIDevices Beyond FinFETGate-All-Around Nanowire FETBangsaruntip,IEDM 2009TFET(Tunnel FET)Vi
27、llalon,VLSI 2012for ultra-low-power applicationHigh-mobility Channel FETYokoyama,VLSI 2011High-mobilityChannel FinFETRadosavljevic,IEDM 201028Continue to Strengthen IP Investments SMIC Historical Third Party IP InvestmentAll actual engaged or forecast IP investment are“Booking”based Continuously foc
28、using on investing advanced technology Driving 28nm IP Investment to meet customers needs Single user-friendly interface to access all technical information with accuracy and consistency11.5X2.2X291st TimeSuccessProductionYieldProductionStabilityDelivery Cycle LowestCostCustomer SatisfactionDefectDe
29、nsityExcellenceManufacturing ExcellenceQuality,Service,Technology Customer Oriented30Design houseEquipmentFoundryMaterialStrong Partnership with Domestic IC Industry Chain 31Front-endMiddle-endBack-end12”Bumping JV with JCETBuilding Chinas Domestic IC Supply ChainWill strengthen the co-operation in
30、the 3D wafer level packaging fieldSMICs advanced 40nm&28nm process technology12 Bumping production line jointly built with JCET JCETs Package production lineat nearby Middle-end facility32Collaboration with Universities and Research Institutes Original Innovation 原始创新 New architecture New material&p
31、rocess 新结构,新材料,新工艺 Scientist lead innovation 充分发挥科研院所/高校的创新精神Advanced Technology Marketing oriented 企业引导、瞄准市场 Academic Effect 具有较高学术影响 Application adopted 先导性成果争取获得企业应用Pre-Manufacture Technology Know-How Dominated 技术细节为主体 Efficiency and cost 快、赶、省，企业发展路线图 Theoretic support from Univ.科研院所/高校提供理论支持Man
32、ufacture TechnologyInnovation DrivenMarket Driven14-10nm28-20nm7nm33Outline1.Major Technology Challenges2.SMICs Technology R&D Strategies and Plans(1)Continue to build&enhance high quality and innovative R&D at SMIC(2)Place significant focus on leading-edge differentiation technologies(3)Strengthen
33、R&D on advanced CMOS technology(4)Enrich design IP to actively support design houses for faster TTM(5)Actively drive the growth in domestic IC industry chain3.Concluding Remarks34 我国的集成电芯片制造距离世界先进水平技术差距3年。工艺技术发展中的五大挑战（光刻、材料、随机误差、结构、工艺集成），其中光刻瓶颈尤为明显。先进工艺步伐趋缓，但是世界龙头在20-14纳米（及以下）产业化技术发展加快。中芯国际发挥中国市场的主场
34、优势，保持技术发展步伐，实行差异化发展。设计IP的建设正在得到更多的重视。产业链需要加强产业联盟的建设,促进产学研协同创新。小 结35Thank You谢谢Diversified Technologies for Various Applications PMIC,PMU,Discrete PowerPower Management Flash Controller,USB,Bridge IC,TCON,Audio,VideoWire-line Communication Mobile Phone CIS,DSC/DV/DPF,NB/PCCAMImage&Display Touchpad co
35、ntroller,MCUMCU Financial Card,Bank Card,ID Card Transportation Card,ePassport,etcSmart Card Wi-Fi,Bluetooth,GPS,AM/FM,NFC,etcWirelessConnectivity Mobile Phone,Tablets,Application Processors,Baseband,SoCMobileComputing NOR Flash,NAND Flash,eNVMMemory TV,Set-Top Box,Game Consoles,ProjectorDigital Hom
36、e3714纳米以下的研究发展趋势(863项目)传统平面晶体管三栅FinFET22nmFinFET16/14nmFinFET10nmFinFET?FDSOI?7nmX device?2012201420162018单栅控制短沟道效应涨落迁移率退化多栅控制全耗尽沟道3D集成度38IntegrityCapabilityExcellenceCSRBuilding Customers Trusts&SuccessBuilding Long Term Partnerships for Mutual SuccessProtect Customers Interests&IPsSteady Growth wi
37、th Confidence&CompetenceBuilding Technology Roadmap&Service OfferingsDiscipline&Manufacturing ExcellenceInnovation,Quality&SafetyYour Trusted Foundry Partner in ChinaAchievements in EHS,Environmental ProtectionsSocial ResponsibilityCharity Program on Liver Transplant393D结构器件：14纳米FinFETGate PolySTIFinRaised EPI用3D晶体管替代平面晶体管Source:SMIC dada40
