1、Shanghai Tianma Micro electronics Co.,LtdSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.2SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.3 :Low Temperature Poly-SiliconSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.4SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.5SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.6SHANGHAI TIANM
2、A MICRO-ELECTRONICS CO.,LTD.7SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.8SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.9SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.10SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.11SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.12+ dopingSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.13S
3、HANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.14SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.15SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.16 高温烘烤;快速热退火;高温腔体或低能量激光去氢FTIR检测氢含量检测氢含量SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.17缓冲层作用缓冲层作用:1.防止玻璃中的金属离子(铝,钡,钠等)在热工艺中扩散到LTPS的有源区,通过缓冲层厚度或沉积条件可以改善多晶硅背面的质量;2.有利于降低热传导,减缓被
4、激光加热的硅冷却速率,利于硅的结晶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.18SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.19四乙氧基硅烷 SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.20SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.21TEOS oxide具有低针孔密度，低氢氧含量，良好的台阶覆盖性。SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.22广泛应用于非晶硅栅绝缘层SHANGHAI TI
5、ANMA MICRO-ELECTRONICS CO.,LTD.23SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.24SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.25SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.26Sony公司提出，现在大部分多晶硅TFT公司采用line beam工艺。Line Beam Scan mode现在技术：XeF SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.27a-SiP-SiSHANGHAI TIANMA MIC
6、RO-ELECTRONICS CO.,LTD.28Partially melting regimeNear-complete melting regimeComplete melting regimeSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.29SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.30SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.31SPCELA晶粒：晶粒：200-300nmSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.32SHA
7、NGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.33V族元素(P ,As, Sb)III族元素(B, Al, Ga)提供电子,形成N型半导体提供空穴,形成P型半导体SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.34离子注入机离子束呈细线状或点状,难以得到大的电流束,采取扫描方式注入,产能低;通过质量分析装置控制注入剂量,均匀度2%离子云注入机离子束线状, 电流束较长, 产能较高,成本低;通过法拉第杯控制注入剂量,均匀度5%SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.35SHANGHAI
8、TIANMA MICRO-ELECTRONICS CO.,LTD.36 以较低的注入量在源极/漏极端与沟道之间掺杂,形成一浓度缓冲区,等效串联了一个大电阻,水平方向电场减少并降低了电场加速引起的碰撞电离产生的热载流子几率 注入剂量过少则造成串联电阻过高,使迁移率下降;注入剂量过多则会失去降低漏极端边缘电场强度的功能.SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.37SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.38Repair broken bonds damaged in ion doping Increase co
9、nductance of doping areaSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.39 多晶硅晶粒间存在粒界态，多晶硅与氧化层间存在界面态，影响晶体管电性。氢化处理以氢原子填补多晶硅原子的未結合鍵或未飽和鍵，粒界态，氧化层缺陷，以及界面态，来减少不稳态数目，提升电特性：迁移率，阈值电压均匀性等。 1.等离子体氢化法：利用含氢的等离子体直接对多晶体和氧化层做 处理 2.固态扩散法：SiNx薄膜作为氢化来源，特定温度烘烤使氢原子扩散进入多晶体和氧化层 SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.40SHANG
10、HAI TIANMA MICRO-ELECTRONICS CO.,LTD.41SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.42TEOS CVD激光晶化设备激光晶化设备离子注入机离子注入机快速热退火设备快速热退火设备ICP-干刻设备干刻设备HF清洗机清洗机PVD光刻机光刻机湿刻设备湿刻设备干刻设备干刻设备CVD共用产线设备LTPS设备SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.43OLED 蒸蒸镀镀封封装装离子注入机离子注入机AOI快速热退火快速热退火设备设备激光晶化设备激光晶化设备磨边清洗机磨边清洗机SHANGHA
11、I TIANMA MICRO-ELECTRONICS CO.,LTD.44SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.452022-6-146LTPS-TNLTPS-OLEDLTPS-IPSSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.47GateActiveSDPassivationITO PixelPoly（多晶硅刻蚀）（多晶硅刻蚀）CHD（沟道掺杂）（沟道掺杂）M1 （gate层）层）ND（n+掺杂）掺杂）PD（ p+掺杂）掺杂）M2 （SD层）层）PV （passivation）Via 1（过孔（过孔1）RE
12、（反射电极）（反射电极）PDL（像素定义层）（像素定义层）Spacera-Si 工艺工艺Via 2 （平坦化层）（平坦化层）Poly（多晶硅刻蚀）（多晶硅刻蚀）CHD（沟道掺杂）（沟道掺杂）M1 （gate层）层）ND（n+掺杂）掺杂）PD（ p+掺杂）掺杂）M2 （SD层）层）PV 2（passivation）Via 1（过孔（过孔1）ITO1Via 2 （平坦化层）（平坦化层）ITO2LTPS-IPSLTPS-OLEDSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.48Glass玻璃投入清洗预处理SHANGHAI TIANMA MICRO-ELECTRO
13、NICS CO.,LTD.49 Model：YHR-100HTCST Port（3个）CST Robot（1个）Chamber （2个）Cooling stage（4层）SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.50GlassPECVD缓冲层+有源层有源层缓冲层去氢防止氢爆清洗SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.51Glass晶化多晶硅测量XRD,RAMAN,SEM,AFM,MIC,UV SLOPESpin cleanSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.52
14、Glass 光刻Driver areaPixel areaP-channelN-channel干刻P-Si去胶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.53Taper 49SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.54PRB+P-channelN-channelChannel doping光刻补偿vthGlass Driver areaPixel areaP-channelN-channel去胶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.55SHANGHAI TIANMA
15、 MICRO-ELECTRONICS CO.,LTD.56PRGlass P-channelN-channelPHX+N+ doping第3次光刻灰化去胶Driver areaPixel areaSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.57SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.58PECVD GIDriver areaPixel areaP-channelN-channelSpin 清洗Glass SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.59PRPRPRPRGl
16、ass Gate 成膜Driver areaPixel areaP-channelN-channelSpin 清洗光刻PRSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.60Driver areaPixel areaGlass P-channelN-channelECCP干刻去胶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.61Taper 53GI loss350ATaper 46GI loss0ASHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.62PHX+LDD DopingLDD
17、DopingP-channelN-channelLDDGlass Driver areaPixel areaSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.63PR PRGlass B+ DopingP-channelN-channelP+ doping第5次光刻灰化去胶Driver areaPixel areaSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.64SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.65Glass Driver areaPixel areaP-channelN
18、-channelBHF清洗ILD成膜活化(氢化）SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.66Glass Driver areaPixel areaP-channelN-channel光刻ICP刻蚀去胶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.67SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.68SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.69Glass Driver areaPixel areaP-channelN-channelB
19、HF清洗SD成膜光刻ECCP干刻去胶Metal annealSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.70PowerAr 成膜温度SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.71SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.72Glass Driver areaPixel areaP-channelN-channel清洗SiNx成膜光刻ICP or RIE去胶SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.73SHANGHAI TIANMA
20、 MICRO-ELECTRONICS CO.,LTD.74清洗涂布有机膜光刻Glass Driver areaPixel areaP-channelN-channelSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.75LTPS（TN）LTPS-OLEDLTPS-IPSSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.76清洗Glass Driver areaPixel areaP-channelN-channelITO镀膜SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.77光刻去胶退火湿刻
21、Glass Driver areaPixel areaP-channelN-channelLTPS-TN array 完成SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.78清洗Ag镀膜Glass Driver areaPixel areaP-channelN-channelITO镀膜ITO镀膜SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.79光刻去胶退火湿刻Glass Driver areaPixel areaP-channelN-channelSHANGHAI TIANMA MICRO-ELECTRONICS CO.
22、,LTD.80SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.81Glass Driver areaPixel areaP-channelN-channelSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.82LTPS-OLED array 完成SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.83清洗Glass Driver areaPixel areaP-channelN-channelITO1层SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.84清洗
23、Glass Driver areaPixel areaP-channelN-channelSiNxSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.85清洗Glass Driver areaPixel areaP-channelN-channelITO2layerSHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.86CellCell工程工程ModuleModule工程工程信号基板驱动IC PanelBLULCD Module连接电路保护板検検 査査装配装配绑定绑定LCD Panel液晶滴下液晶滴下真空贴合真空贴合 切割切割CFTFT基板TFTTFT工程工程成成膜膜膜Glass基板PR塗布塗布曝曝光光Mask現像現像刻蚀刻蚀剥離剥離TFT基板重复Glass基板SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.87730*920mm365*460mm切割SHANGHAI TIANMA MICRO-ELECTRONICS CO.,LTD.88Q&A
