1、本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/101Crystal Structures Amorphous No repeated structure at all Polycrystalline Some repeated structures Single crystal One repeated structure本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/102Amorphous Structure本文档所提供的信息仅供参考之用,不能作为科学依据,
2、请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/103Polycrystalline StructureGrainGrain Boundary本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/104Single Crystal Structure本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/105Why Silicon? Abundant, cheap Silicon dioxide is very stable, strong dielectri
3、c, and it is easy to grow in thermal process. Large band gap, wide operation temperature range.本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/106NameSiliconSymbalSiAtomic number14Atomic weight28.0855DiscovererJns Jacob BerzeliusDiscovered atSwedenDiscovery date1824Origin of nameFrom the La
4、tin word silicis meaning flintBond length in single crystal Si2.352 Density of solid2.33 g/cm3Molar volume12.06 cm3Velocity of sound2200 m/secElectrical resistivity100,000 cmReflectivity28%Melting point1414 CBoiling point2900 CSource: http:/www.shef.ac.uk/chemistry/web-elements/nofr-key/Si.html本文档所提
5、供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/107Unit Cell of Single Crystal Silicon 本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/108Crystal Orientations: xyz plane本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/109Crystal Orientations: xyz plane plane本文档所提供的信息仅供参考之用,不能作为科
6、学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1010Crystal Orientations: xyz plane本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1011 Orientation PlaneAtomBasic lattice cell本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1012 Orientation PlaneSilicon atomBasic lattice cell本文档所提供的信息仅供参考之用,不能作
7、为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1013Illustration of the Point DefectsSilicon AtomImpurity on substitutional siteFrenkel DefectVacancy(空位) or Schottky DefectImpurity in Interstitial SiteSilicon Interstitial間隙本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1014Dislocation Defects 本文档所提供
8、的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1015From Sand to Wafer Quartz sand: silicon dioxide Sand to metallic grade silicon (MGS) React MGS powder with HCl to form TCS Purify TCS by vaporization and condensation React TCS to H2 to form polysilicon (EGS) Melt EGS and pull single crystal ing
9、ot本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1016From Sand to Wafer (cont.) Cut end, polish side, and make notch or flat Saw ingot into wafers Edge rounding, lap, wet etch, and CMP Laser scribe Epitaxy deposition本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1017晶圓形成之步驟From S
10、and to Silicon Heat (2000 C)SiO2 + 2C Si + 2CO Sand Carbon MGS Carbon Dioxide MGS (poly-silicon) with 98% purity (1)首先由石英砂提煉成冶金級多晶矽 本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1018Silicon Purification ISi + HCl TCS(vapor) Silicon PowderHydrochlorideFiltersCondenserPurifierPure TCS (liqu
11、id) with 99.9999999%Reactor, 300 C本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1019Polysilicon Deposition, EGS Heat (1100 C)SiHCl3 + H2 Si + 3HCl TCS (liquid) Hydrogen EGS Hydrochloride EGS (Electronic-grade Silicon) is also poly-silicon本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2
12、022/6/1020Silicon Purification IILiquid TCSH2Carrier gas bubblesH2 and TCSProcess ChamberTCS+H2EGS+HClEGS本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1021Electronic Grade SiliconSource: http:/ Pulling Make a single-crystal silicon ingot Czochralski (CZ) method Floating Zone (FZ) method本文
13、档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1023 Crystal Pulling: CZ methodGraphite CrucibleSingle Crystal silicon IngotSingle Crystal Silicon SeedQuartz CrucibleHeating Coils1415 CMolten Silicon本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1024CZ Crystal PullersMitsubish Mater
14、ials SiliconSource: http:/ Crystal PullingSource: http:/ Zone MethodHeating CoilsPoly Si RodSingle Crystal SiliconSeed CrystalHeating Coils MovementMolten Silicon本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1027Comparison of the Two Methods CZ method is more popular Cheaper Larger wafer
15、size (300 mm in production) Reusable materials Floating Zone Pure silicon crystal (no crucible) More expensive, smaller wafer size (150 mm) Mainly for power devices.本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1028Ingot Polishing, Flat, or NotchFlat, 150 mm and smallerNotch, 200 mm and l
16、arger本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1029Wafer SawingOrientation NotchCrystal IngotSaw BladeDiamond CoatingCoolantIngot Movement本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1030Parameters of Silicon WaferWafer Size (mm)Thickness (m)Area (cm2)Weight (grams)27920.2
17、61.3238145.614.0510052578.659.67125625112.7217.87150675176.7227.82200725314.1652,98300775706.21127.6250.8 (2 in)76.2 (3in)本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1031Wafer Edge Rounding (邊緣圓滑化)WaferWafer movementWafer Before Edge RoundingWafer After Edge Rounding本文档所提供的信息仅供参考之用,不能作为
18、科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1032Wafer Lapping (粗磨拋光) Rough polished conventional, abrasive, slurry-lapping To remove majority of surface damage To create a flat surface本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1033Wet Etch Remove defects from wafer surface 4:1:3 mixture of HN
19、O3 (79 wt% in H2O), HF (49 wt% in H2O), and pure CH3COOH. Chemical reaction:3 Si + 4 HNO3 + 18 HF 3 H2SiF6 + 4 NO + 8 H2O本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1034Chemical Mechanical Polishing (CMP)SlurryPolishing PadPressureWafer HolderWafer本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,
20、请联系本人或网站删除。2022/6/1035200 mm Wafer Thickness and Surface Roughness Changes76 m914 mAfter Wafer SawingAfter Edge Rounding76 m914 m12.5 m814 m 1000 C, N2 can react with silicon SiN on wafer surface affects epi deposition H2 is used for epitaxy chamber purge Clean wafer surface by hydrides formation本文档
21、所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1055Properties of HydrogenNameHydrogenSymbolHAtomic number1Atomic weight1.00794DiscovererHenry CavendishDiscovered atEnglandDiscovery date1766Origin of nameFrom the Greek words hydro and genes meaningwater and generatorMolar volume11.42 cm3Veloci
22、ty of sound1270 m/secRefractive index1.000132Melting point-258.99 CBoiling point-252.72 CThermal conductivity0.1805 W m-1 K-1本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1056Defects in Epitaxy LayerDislocationStacking Fault from Surface NucleationImpurity ParticleHillockStacking Fault fo
23、rm Substrate Stacking Fault After S.M. Zses VLSI TechnologySubstrateEpi Layer本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1057Future Trends Larger wafer size Single wafer epitaxial grow Low temperature epitaxy Ultra high vacuum (UHV, to 10-9 Torr) Selective epitaxy本文档所提供的信息仅供参考之用,不能作为科学依
24、据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1058Summary Silicon is abundant, cheap and has strong, stable and easy grown oxide. and CZ and floating zone, CZ is more popular Sawing, edging, lapping, etching and CMP本文档所提供的信息仅供参考之用,不能作为科学依据,请勿模仿。文档如有不当之处,请联系本人或网站删除。2022/6/1059Summary Epitaxy: single crystal on single crystal Needed for bipolar and high performance CMOS, DRAM. Silane, DCS, TCS as silicon precursors B2H6 as P-type dopant PH3 and AsH3 as N-type dopants Batch and single wafer systems